All Courses
EE634 Postgraduate

Simulation of Devices and Circuits

Credits
6
Type
Theory
Lecture
6 hr
Tutorial
1 hr
Half sem
No

Course Content

Formulation of network equations: Nodal, mesh, modified nodal and hybrid analysis equations. Sparse matrix techniques; Solution of nonlinear networks through Newton-Raphson technique. Multistep methods: convergence and stability; Special classes of multistep methods: Adams-bashforth, Adams-Moulton and Gear`s methods; Solution of stiff systems of equations; Adaptation of multistep methods to the solution of electrical networks; General purpose circuit simulators. Review of semiconductor equations (Poisson, continuity, drift-diffusion, trap rate). Finite difference formulation of these equations in 1D and 2D. Grid generation. Physical/empirical models of semiconductor parameters (mobility, lifetime, band gap, etc.). Computation of characteristics of simple devices (p-n junction, MOS capacitor, MOSFET, etc.); Small-signal analysis.

Text / References

  1. 1 L.O.Chua and P.M.Lin, Computer aided analysis and electronic circuits, Prentice Hall, 1975.S. Selberherr, Analysis and Simulation of Semiconductor Devices, Springer-Verlag, 1984. N.J. McCalla, Fundamentals of Computer Aided Circuit Simulation, Kluwer Academic Publishers, 1988.