Course Content
Overview of semiconductor processing, clean room and safety requirements, wafer cleaning. Mask making and photolithography. Wet and dry etching. Impurity diffusion; solution of diffusion equation, anomalous diffusion and emitter push effect, modelling of diffusion phenomena, technological processes for diffusion, characterisation of diffused layers, process simulation of diffusion in silicon. Ion implantation: principles, techniques and applications, removal of implant damage. Oxidation : Procedures for oxidation of silicon, kinetics of oxidation, Deal-Grove model and refinements of this model, impurity redistribution during oxidation, local oxidation, evaluation of oxide layers, ellipsometry. Epitaxy : technological procedures, modeling, redistribution of impurities during epitaxy, evaluation of epitaxial layers chemical vapour deposition and LPCVD of poly silicon, oxide and nitride layers. Metallisation and multilayers interconnects. Complete process flows for CMOS, NMOS and bipolar technologies.
Text / References
- 1 S.K. Ghandi, VLSI fabrication principles, Wiley 1983.
- 2 S.M. Sze ed. VLSI technology, 2nd edition, McGraw Hill, 1988.
- 3 W.R. Runyan, Silicon semiconductor Technology, McGraw Hill, 1970.