Course Content
Basics of MOSFET operation (Mechanisms for Drain, Substrate and Gate current) Conventional and non-conventional MOSFET scaling - innovations in materials for gate stack, channel and junctions, and architecture, processes for FinFETs and Gate All Around Nanosheet FETs Introduction to Flash memory NOR/NAND architecture, Floating Gate/Charge Trap, Mirror Bit Basics of Flash memory operation: Program, Erase, Program/Read Disturbs, Retention Innovations in Flash Memory scaling, 2D and 3D NAND, Floating Gate and Charge Trap Flash Reliability of logic and memory devices (theory, measurements and modeling) BTI, HCD, TDDB in logic, P/E cycling, Data retention, Disturbs in memory
Text / References
- 1 Taur and Ning, Fundamentals of Modern VLSI Devices, Cambridge Univ. Press, 2009Cappelletti, Golla, Olivo and Zanoni, Flash Memories, Springer, 1999Micheloni, Crippa and Marelli, Inside NAND Flash Memories, Springer, 2010Mahapatra, Fundamentals of Bias Temperature Instability in MOS Transistors, Springer, 2016Grasser, Hot Carrier Degradation in Semiconductor Devices, Springer, 2IEEE Xplore for review papers EEE Xplore for latest research papers