GaN Devices and GaN MMIC

Advantages of wide-bandgap semiconductors for high performance transistors, properties of GaN along with AlN and InN. Properties of heterostructures, heterostructure band-diagram at equilibrium and under-bias, basic high electron mobility transistors (HEMT) physics, operations, and applications. Effect of device geometry of device characteristics, DC, RF and Power characteristics of GaN based HEMTs, basic process flow for GaN HEMT fabrication, characterization, and modeling, advanced device architectures using other ternary and quaternary alloys, and back-barriers. Basic construction of monolithic microwave integrated circuits, design and characteristics of RF passive components, design, fabrication, and characterizations of GaN-based MMICs, various architectures of power amplifiers.